Terahertz detector utilizing two-dimensional electronic fluid

被引:127
作者
Lu, JQ [1 ]
Shur, MS
Hesler, JL
Sun, LQ
Weikle, R
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA
关键词
HEMT; plasma wave electronics; terahertz detector;
D O I
10.1109/55.720190
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the first implementation of a terahertz detector utilizing two-dimensional (2-D) electronic fluid in a high electron mobility transistor (HEMT) operating at 2.5 THz. The terahertz radiation induced a de drain-to-source voltage proportional to the radiation intensity. The measured dependencies of the detector responsivity on the gate bias are in good agreement with the gate bias dependence of the normalized responsivity predicted by the detector theory. This result shows the potential for developing a new family of electronics devices-plasma wave electronics devices-operating at terahertz frequencies.
引用
收藏
页码:373 / 375
页数:3
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