Micromachined tools for nano technology-twin nano-probes and nano-scale gap control by integrated microactuators

被引：7

作者：

Kakushima, K ^{[1
]}

Mita, M ^{[1
]}

Kobayashi, D ^{[1
]}

Hashiguchi, G ^{[1
]}

Endo, J ^{[1
]}

Wada, Y ^{[1
]}

Fujita, H ^{[1
]}

机构：

[1] Univ Tokyo, IIS, Minato Ku, Tokyo, Japan

来源：

14TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2001年

关键词：

D O I：

10.1109/MEMSYS.2001.906536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the fabrication and actuation of a novel device composed of twin nano probes. The size of the probes are 200nm-high, 280nm-wide and 5 mum-long, which are formed by silicon anisotropic etching. The initial gap of about 400nm between the probes become 84nm when 101mW input power was given to the thermal expansion micro actuators integrated with the probes. Precise motion down to 4nm/mW was confirmed by simultaneous TEM observation.

引用

页码：294 / 297

页数：4

共 3 条

[1] NEW FABRICATION METHOD AND ELECTRICAL CHARACTERISTICS OF CONICAL SILICON FIELD EMITTERS [J].

HASHIGUCHI, G ;

MIMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (03) :1493-1497

[2] FABRICATION OF SILICON QUANTUM WIRES USING SEPARATION BY IMPLANTED OXYGEN WAFER [J].

HASHIGUCHI, G ;

MIMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A) :L1649-L1650

[3]

HASHIGUCHI G, 1999, TRANSDUCERS99, P862

← 1 →