NEW FABRICATION METHOD AND ELECTRICAL CHARACTERISTICS OF CONICAL SILICON FIELD EMITTERS

被引：14

作者：

HASHIGUCHI, G

MIMURA, H

机构：

[1] Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, Kanagawa, 229

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 03期

关键词：

FIELD EMITTER; ANISOTROPIC ETCHING; LOGOS; SI; VACUUM MICROELECTRONICS;

D O I：

10.1143/JJAP.34.1493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new fabrication method for a silicon field emitter has been proposed, which combines the techniques of Si KOK anisotropic etching and local oxidation of silicon (LOCOS) to form the emitter tip. The fabricated conical silicon emitter had an extremely well-defined structure indicative of good reproducibility and uniformity of the fabrication process. The emission characteristics were examined under DC and AC conditions, and indicated high performance of the emitter. Successful application to a digit display has been demonstrated.

引用

页码：1493 / 1497

页数：5

共 22 条

[1]

ARAI M, 1993, IEICE ED93142 TECH R, P55

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