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OXIDATION INDUCED STRESSES AND SOME EFFECTS ON THE BEHAVIOR OF OXIDE-FILMS
被引:114
作者
:
HSUEH, CH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
HSUEH, CH
[
1
]
EVANS, AG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
EVANS, AG
[
1
]
机构
:
[1]
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 11期
关键词
:
D O I
:
10.1063/1.331854
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:6672 / 6686
页数:15
相关论文
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[1]
CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
BRANTLEY, WA
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0
引用数:
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h-index:
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机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
BRANTLEY, WA
[J].
JOURNAL OF APPLIED PHYSICS,
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44
(01)
: 534
-
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[2]
FLAWS IN SIDEWALL OXIDES GROWN ON POLYSILICON GATE
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MORRISSEY, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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129
(05)
: 1084
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[3]
CHIN D, UNPUB
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
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0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[5]
VISCOUS-FLOW OF THERMAL SIO2
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SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
[J].
APPLIED PHYSICS LETTERS,
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: 290
-
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[6]
STRESS IN THERMAL SIO2 DURING GROWTH
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Sandia Laboratories, Albuquerque
EERNISSE, FP
[J].
APPLIED PHYSICS LETTERS,
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: 8
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[7]
EVANS AG, INT J SOLIDS STRUCTU
[8]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
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SCHLEGEL, WA
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
: 2429
-
+
[9]
TEMPERATURE-DEPENDENCE OF THE INTERNAL MECHANICAL STRESSES IN THE SI-SIO2 SYSTEM
JAROSZ, M
论文数:
0
引用数:
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0
JAROSZ, M
KOCSANYI, L
论文数:
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KOCSANYI, L
GIBER, J
论文数:
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[J].
APPLIED SURFACE SCIENCE,
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: 122
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127
[10]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
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论文数:
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[J].
JOURNAL OF CHEMICAL PHYSICS,
1962,
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←
1
2
→
共 19 条
[1]
CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
BRANTLEY, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
BRANTLEY, WA
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 534
-
535
[2]
FLAWS IN SIDEWALL OXIDES GROWN ON POLYSILICON GATE
BROWN, DK
论文数:
0
引用数:
0
h-index:
0
BROWN, DK
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
MORRISSEY, JM
论文数:
0
引用数:
0
h-index:
0
MORRISSEY, JM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
: 1084
-
1089
[3]
CHIN D, UNPUB
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
: 3770
-
&
[5]
VISCOUS-FLOW OF THERMAL SIO2
EERNISSE, EP
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(06)
: 290
-
293
[6]
STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
EERNISSE, FP
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(01)
: 8
-
10
[7]
EVANS AG, INT J SOLIDS STRUCTU
[8]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
JACCODINE, RJ
SCHLEGEL, WA
论文数:
0
引用数:
0
h-index:
0
SCHLEGEL, WA
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
: 2429
-
+
[9]
TEMPERATURE-DEPENDENCE OF THE INTERNAL MECHANICAL STRESSES IN THE SI-SIO2 SYSTEM
JAROSZ, M
论文数:
0
引用数:
0
h-index:
0
JAROSZ, M
KOCSANYI, L
论文数:
0
引用数:
0
h-index:
0
KOCSANYI, L
GIBER, J
论文数:
0
引用数:
0
h-index:
0
GIBER, J
[J].
APPLIED SURFACE SCIENCE,
1982,
14
(01)
: 122
-
127
[10]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
JORGENSEN
论文数:
0
引用数:
0
h-index:
0
JORGENSEN
[J].
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
: 874
-
&
←
1
2
→