The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character

被引:48
作者
Logothetidis, S
Petalas, J
Ves, S
机构
[1] Department of Physics, Aristotle University of Thessaloniki
关键词
D O I
10.1063/1.360892
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical properties of amorphous hydrogenated carbon films prepared with various techniques are studied with conventional and synchrotron-radiation spectroscopic ellipsometry (SE) and the pseudodielectric function [epsilon(omega)] of diamondlike and graphitelike films is presented in the energy region 1.5-10 eV. Characteristic features of the measured [epsilon(omega)] and the calculated electron-energy-loss (EEL) function are found to serve as useful criteria for the classification of such materials. The results and information obtained by SE are compared to those obtained by EEL and Raman spectroscopy techniques, which are the most widely used for this purpose. Thermal annealing experiments up to 675 degrees C with in situ monitoring of the [epsilon(omega)] reveal the undergoing structural changes in the material character from diamondlike into graphitelike during the annealing. The major modifications which turn the material into sp(2)-like are found to take place around and above 550 degrees C. The fundamental gap along with other optical parameters of the materials are compared to those of diamond and graphite and their shift with temperature is discussed and used to illustrate further the prevalence of the graphitic character during and after the annealing. Finally, the optimum growth parameters for the production of diamondlike material are discussed in the case of the glow-discharge and ion-beam deposited films. (C) 1996 American Institute of Physics.
引用
收藏
页码:1040 / 1050
页数:11
相关论文
共 36 条
[1]  
[Anonymous], 1991, HDB OPTICAL CONSTANT
[2]   OPTICAL-PROPERTIES OF THIN-FILMS [J].
ASPNES, DE .
THIN SOLID FILMS, 1982, 89 (03) :249-262
[3]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[4]  
BARTH J, 1991, HDB OPTICAL CONSTANT, V2, P2193
[5]  
BASCA WS, 1993, PHYS REV B, V47, P10931
[6]   DETERMINATION OF THE HYDROGEN DIFFUSION-COEFFICIENT IN HYDROGENATED AMORPHOUS-SILICON FROM HYDROGEN EFFUSION EXPERIMENTS [J].
BEYER, W ;
WAGNER, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8745-8750
[8]  
CONNELL GAN, 1979, AMORPHOUS SEMICONDUC
[9]   OPTICAL-CONSTANTS OF HYDROGENATED AMORPHOUS-CARBON IN THE RANGE 0-100 EV [J].
CURRO, G ;
NERI, F ;
MONDIO, G ;
COMPAGNINI, G ;
FOTI, G .
PHYSICAL REVIEW B, 1994, 49 (12) :8411-8417
[10]   USE OF RAMAN-SCATTERING TO INVESTIGATE DISORDER AND CRYSTALLITE FORMATION IN AS-DEPOSITED AND ANNEALED CARBON-FILMS [J].
DILLON, RO ;
WOOLLAM, JA ;
KATKANANT, V .
PHYSICAL REVIEW B, 1984, 29 (06) :3482-3489