Subwavelength-resolution Raman microscopy of si structures using metal-particle-topped AFM probe

被引：42

作者：

Poborchii, V ^{[1
]}

Tada, T ^{[1
]}

Kanayama, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, MIRAI, Adv Semiconductor Res Ctr, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期

关键词：

silicon; stress; Raman microscopy; subwavelength resolution; atomic force microscopy; polarization of light;

D O I：

10.1143/JJAP.44.L202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using depolarization of the 364 nm light scattered by a small particle on the (100)Si surface, one can obtain allowed 520cm(-1) Raman signal from the localized area of Si around the particle, while the ordinary Raman signal is forbidden by the polarization selection rules. We have realized this scheme using Ag-particle-topped quartz atomic force microscope (AFM) probe immersed into glycerol droplet on Si surface and applied to local stress measurement. Lateral resolution in the range of 100 nm was demonstrated, and stress variation in a strained Si film was investigated.

引用

页码：L202 / L204

页数：3

共 9 条

[1] Locally enhanced Raman spectroscopy with an atomic force microscope [J].