Effect of microstructures on the electrical and optoelectronic properties of nanocrystalline Ta-Si-N thin films by reactive magnetron cosputtering

被引：17

作者：

Chung, C. K. ^{[1
]}

Chen, T. S.

机构：

[1] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 701, Taiwan

来源：

SCRIPTA MATERIALIA | 2007年 / 57卷 / 07期

关键词：

PVD; thin films; nanocrystalline microstructure; electro-optical; Ta-Si-N;

D O I：

10.1016/j.scriptamat.2007.06.011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The evolution of an amorphous-like to a polycrystalline microstructure and the composition of Ta-Si-N nanocomposites was controlled by nitrogen flow ratios during reactive cosputtering. It influences the chemical bonding, electrical resistivity and optoelectronic luminescent properties of Ta-Si-N films. AmorFhous-like Ta-Si-N films formed at a Si/(Si + Ta) ratio larger than 6% had much finer grains, smoother morphology, lower Ta 4f(7/2) binding energy and lower resistivity compared to polycrystalline films. A strong visible photoluminescence was observed at Ta53Si7N40 compositions for a peak maximum at 554 nm (2.24 eV). (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：611 / 614

页数：4

共 21 条

[1] High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer
Cho, KS
Park, NM
Kim, TY
Kim, KH
Sung, GY
Shin, JH
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
[2] Thermal stability of Ta-Si-N nanocomposite thin films at different nitrogen flow ratios
Chung, C. K.
Chen, T. S.
Peng, C. C.
Wu, B. H.
[J]. SURFACE & COATINGS TECHNOLOGY, 2006, 201 (07) : 3947 - 3952
[3] Material characterization and nanohardness measurement of nanostructured Ta-Si-N film
Chung, CK
Su, PJ
[J]. SURFACE & COATINGS TECHNOLOGY, 2004, 188 : 420 - 424
[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
CULLIS, AG
CANHAM, LT
[J]. NATURE, 1991, 353 (6342) : 335 - 338
[5] CULLITY BD, 1978, ELEMENTS XRAY DIFFRA, pCH3
[6] Photoluminescence resulting from semiconductor - Metal solid solution observed in one-dimensional semiconductor nanostructures
Hsu, YJ
Lu, SY
[J]. LANGMUIR, 2004, 20 (01) : 23 - 26
[7] Influence of nitrogen content on the crystallization behavior of thin Ta-Si-N diffusion barriers
Hübner, R
Hecker, M
Mattern, N
Voss, A
Acker, J
Hoffmann, V
Wetzig, K
Engelmann, HJ
Zschech, E
Heuer, H
Wenzel, C
[J]. THIN SOLID FILMS, 2004, 468 (1-2) : 183 - 192
[8] Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SIH4 -: art. no. 091908
Kim, BH
Cho, CH
Kim, TW
Parka, NM
Sung, GY
Park, SJ
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
[9] TANTALUM-BASED DIFFUSION-BARRIERS IN SI/CU VLSI METALLIZATIONS
KOLAWA, E
CHEN, JS
REID, JS
POKELA, PJ
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1369 - 1373
[10] Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate
Li, Chun
Fang, Guojia
Su, Fuhai
Li, Guohua
Wu, Xiaoguang
Zhao, Xingzhong
[J]. NANOTECHNOLOGY, 2006, 17 (15) : 3740 - 3744

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