Trapping effects on the frequency response of dithiolene-based planar photodetectors

被引:8
作者
Agostinelli, T. [1 ]
Caironi, M. [1 ]
Natali, D. [1 ]
Sampietro, M. [1 ]
Arca, M. [2 ]
Devillanova, F. A. [2 ]
Ferrero, V. [3 ]
机构
[1] Politecn Milan, Dipartimento Elettron & Informat, Unita IIT, I-20133 Milan, Italy
[2] Complesso Univ, Dipartimento Chim Inorgan & Analit, I-09042 Cagliari, Italy
[3] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy
关键词
organic photodetectors; trap density distribution; modulated photocurrent;
D O I
10.1016/j.synthmet.2007.10.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The paper analyses the interrelation between the signal frequency response in an organic planar photodetector and the distribution of traps of the active material playing a fundamental role in the transport of charge carriers. In particular, the response of a dithiolene-based photodetector spectrally matched to the near infrared has been acquired under optical pulses ranging from 10 Hz to I MHz in frequency. By means of modulated photocurrent spectroscopy, the trap density distribution of the dithiolene in the solid state has been extracted. The capture and release of photogenerated carriers exerted by a Gaussian density of trapping states, located 0.42 eV below the transport energy, is shown to be the responsible for the observed device frequency response. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:984 / 987
页数:4
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