An Exchange Intercalation Mechanism for the Formation of a Two-Dimensional Si Structure Underneath Graphene

被引：70

作者：

Cui, Yi ^{[1
]}

Gao, Junfeng ^{[2
]}

Jin, Li ^{[1
]}

Zhao, Jijun ^{[2
]}

Tan, Dali ^{[1
]}

Fu, Qiang ^{[1
]}

Bao, Xinhe ^{[1
]}

机构：

[1] Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China

[2] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Elect Beams, Dalian 116024, Peoples R China

来源：

NANO RESEARCH | 2012年 / 5卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Graphene; photoemission electron microscopy (PEEM); low energy electron microscopy (LEEM); intercalation; silicon; Ru(0001); BIMETALLIC SURFACES; GROWTH; DEPOSITION; CLUSTERS;

D O I：

10.1007/s12274-012-0215-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A two-dimensional (2D) Si film can form between a graphene overlayer and a Ru(0001) substrate through an intercalation process. At the graphene/2D-Si/Ru(0001) surface, the topmost graphene layer is decoupled from the Ru substrate and becomes quasi-freestanding. The interfacial Si layers show high stability due to the protection from the graphene cover. Surface science measurements indicate that the surface Si atoms can penetrate through the graphene lattice, and density functional theory calculations suggest a Si-C exchange mechanism facilitates the penetration of Si at mild temperatures. The new mechanism may be involved for other elements on graphene, if they can bond strongly with carbon. This finding opens a new route to form 2D interfacial layers between graphene and substrates.

引用

页码：352 / 360

页数：9

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