High temperature oxidation of (Ti1-xAlx)N coatings made by plasma enhanced chemical vapor deposition

被引:49
作者
Kim, BJ [1 ]
Kim, YC
Nah, JW
Lee, JJ
机构
[1] Seoul Natl Univ, Sch Mat Sci Engn, Seoul 151742, South Korea
[2] LG Semicon Co Ltd, Hungduk Gu 361480, Cheongju Si, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 01期
关键词
D O I
10.1116/1.581562
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(Ti1-xAlx)N coatings were deposited by the plasma enhanced chemical vapor deposition method using a gas mixture of TiCl4, AlCl3, NH3, H-2 and Ar, and the oxidation behavior at high temperatures as well as the oxidized structure of the coatings were examined. The oxidation rate of the coatings at temperatures below 1000 degrees C was found to fit well to a parabolic time dependence. It has also been found that up to 900 degrees C (Ti1-xAlx)N coatings at X greater than or equal to 0.25 showed considerably improved oxidation resistance compared to TiN, due to the formation of a dense alpha-Al2O3 layer at the surface of the coatings. At X<0.25, however, this dense protective layer could not form, and the coatings were fully oxidized after a short period of time. When the temperature reached 900 degrees C, Fe in the substrate diffused out through the coating by pipe diffusion as well as through the cracks that were produced by thermal stresses, and oxidized rapidly at the surface of the coating. (C) 1999 American Vacuum Society. [S0734-2101(99)04101-9].
引用
收藏
页码:133 / 137
页数:5
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