Influence of the local absorber layer thickness on the performance of ZnO nanorod solar cells

被引：78

作者：

Belaidi, Abdelhak ^{[1
]}

Dittrich, Thomas ^{[1
]}

Kieven, David ^{[1
]}

Tornow, Julian ^{[1
]}

Schwarzburg, Klaus ^{[1
]}

Lux-Steiner, Martha ^{[1
]}

机构：

[1] Helmholtz Zentrurn Berlin Mat & Energie, D-14109 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 04期

关键词：

D O I：

10.1002/pssr.200802092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The local absorber layer thickness (d(local)) of solar cells with extremely thin absorber was changed between 10 nm and 70 nm. As a model system, ZnO nanorod. arrays (electron conductor) with fixed internal surface area coated with In2S3 (absorber) and impregnated with CuSCN (transparent hole conductor) were applied. The performance of the small area solar cells depended critically on d(local). The highest short circuit current density was reached for the lowest d(local). In contrast, the highest open circuit voltage was obtained for the highest d(local). A maximum energy conversion efficiency of 3.4% at AM1.5 was achieved. Limiting factors are discussed.

引用

页码：172 / 174

页数：3

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