Use of poly(3-hexylthiophene)/poly(methyl methacrylate) (P3HT/PMMA) blends to improve the performance of water-gated organic field-effect transistors

被引：56

作者：

Kergoat, Loig ^{[1
]}

Battaglini, Nicolas ^{[1
]}

Miozzo, Luciano ^{[1
]}

Piro, Benoit ^{[1
]}

Pham, Minh-Chau ^{[1
]}

Yassar, Abderrahim ^{[1
]}

Horowitz, Gilles ^{[1
]}

机构：

[1] Univ Paris Diderot, ITODYS, F-75205 Paris 13, France

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 07期

关键词：

Organic transistors; Electrolyte-gated; Polymer blends; Semiconductor polymers; LOW-VOLTAGE; PHASE-SEPARATION; CHARGE-CARRIERS; EFFECT MOBILITY; POLYMER BLENDS; DIELECTRICS; RESISTANCE; MORPHOLOGY;

D O I：

10.1016/j.orgel.2011.04.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Poly(3-hexylthiophene)/poly(methyl methacrylate) (P3HT/PMMA) blends were used as the semiconducting layer in water-gated organic field-effect transistors (OFETs), which resulted in improving the electrical performance of the previously reported devices with pure P3HT. Topographic investigations by atomic force microscopy carried out on blends with various PMMA to P3HT ratio reveal a lateral phase separation of the two components. All transistors operate at very low voltage (below 1 V), with a threshold voltage ranging form 0.3 to 0.5 V. An optimum of the composition of the blend is found with 70% of PMMA, leading to a maximum on/off current ratio and a mobility comparable to that of pure P3HT. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1253 / 1257

页数：5

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