Local charge carrier mobility in disordered organic field-effect transistors

被引:153
作者
Tanase, C
Meijer, EJ
Blom, PWM
de Leeuw, DM
机构
[1] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
[2] Univ Groningen, DPI, NL-9747 AG Groningen, Netherlands
[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[4] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[5] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
关键词
poly (3-hexyl thiophene); field-effect transistor; charge carrier mobility;
D O I
10.1016/S1566-1199(03)00006-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In conventional field-effect transistors, the extracted mobility does not take into account the distribution of charge carriers. However, in disordered organic field-effect transistors, the local charge carrier mobility decreases from the semiconductor/insulator interface into the bulk, due to its dependence on the charge carrier density. It is demonstrated that the conventional field-effect mobility is a good approximation for the local mobility of the charge carriers at the interface, (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:33 / 37
页数:5
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