Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions

被引:152
作者
Singh-Bhalla, Guneeta [1 ,2 ,3 ,4 ]
Bell, Christopher [3 ,5 ]
Ravichandran, Jayakanth [2 ,6 ]
Siemons, Wolter [1 ]
Hikita, Yasuyuki [3 ]
Salahuddin, Sayeef [7 ]
Hebard, Arthur F. [4 ]
Hwang, Harold Y. [3 ,5 ]
Ramesh, Ramamoorthy [1 ,2 ,8 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778561, Japan
[4] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[5] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
[6] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA
[7] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[8] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
ELECTRON GASES; SRTIO3;
D O I
10.1038/NPHYS1814
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. Here we present evidence of such a built-in potential across polar LaAlO3 thin films grown on SrTiO3 substrates, a system well known for the electron gas that forms at the interface. By carrying out tunnelling measurements between the electron gas and metallic electrodes on LaAlO3 we measure a built-in electric field across LaAlO3 of 80.1 meV angstrom(-1). In addition, capacitance measurements reveal the presence of an induced dipole moment across the heterostructure. We foresee use of the ionic built-in potential as an additional tuning parameter in both existing and future device architectures, especially as atomic control of oxide interfaces gains widespread momentum.
引用
收藏
页码:80 / 86
页数:7
相关论文
共 49 条
[1]   Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].
Ambacher, O ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Wittmer, L ;
Stutzmann, M ;
Rieger, W ;
Hilsenbeck, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233
[2]   Dominant Mobility Modulation by the Electric Field Effect at the LaAlO3/SrTiO3 Interface [J].
Bell, C. ;
Harashima, S. ;
Kozuka, Y. ;
Kim, M. ;
Kim, B. G. ;
Hikita, Y. ;
Hwang, H. Y. .
PHYSICAL REVIEW LETTERS, 2009, 103 (22)
[3]   Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface [J].
Bell, C. ;
Harashima, S. ;
Hikita, Y. ;
Hwang, H. Y. .
APPLIED PHYSICS LETTERS, 2009, 94 (22)
[4]   FERROELECTRIC RELAXATION OF THE SRTIO3(100) SURFACE [J].
BICKEL, N ;
SCHMIDT, G ;
HEINZ, K ;
MULLER, K .
PHYSICAL REVIEW LETTERS, 1989, 62 (17) :2009-2011
[5]   Magnetic effects at the interface between non-magnetic oxides [J].
Brinkman, A. ;
Huijben, M. ;
Van Zalk, M. ;
Huijben, J. ;
Zeitler, U. ;
Maan, J. C. ;
Van der Wiel, W. G. ;
Rijnders, G. ;
Blank, D. H. A. ;
Hilgenkamp, H. .
NATURE MATERIALS, 2007, 6 (07) :493-496
[6]   Oxide superlattices with alternating p and n interfaces [J].
Bristowe, N. C. ;
Artacho, Emilio ;
Littlewood, P. B. .
PHYSICAL REVIEW B, 2009, 80 (04)
[7]   CURRENT-VOLTAGE CHARACTERISTICS OF STRAINED PIEZOELECTRIC STRUCTURES [J].
BYKHOVSKI, A ;
GELMONT, B ;
SHUR, M ;
KHAN, A .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) :1616-1620
[8]   Polarization-engineered removal of buffer leakage for GaN transistors [J].
Cao, Yu ;
Zimmermann, Tom ;
Xing, Huili ;
Jena, Debdeep .
APPLIED PHYSICS LETTERS, 2010, 96 (04)
[9]   Towards Two-Dimensional Metallic Behavior at LaAlO3/SrTiO3 Interfaces [J].
Copie, O. ;
Garcia, V. ;
Boedefeld, C. ;
Carretero, C. ;
Bibes, M. ;
Herranz, G. ;
Jacquet, E. ;
Maurice, J. -L. ;
Vinter, B. ;
Fusil, S. ;
Bouzehouane, K. ;
Jaffres, H. ;
Barthelemy, A. .
PHYSICAL REVIEW LETTERS, 2009, 102 (21)
[10]   The internal electric field originating from the mismatch effect and its influence on ferroelectric thin film properties [J].
Glinchuk, MD ;
Morozovska, AN .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) :3517-3531