Structural characterization of GaAs/thiol/electrolyte interface

被引：10

作者：

Abdelghani, A ^{[1
]}

Jacquin, C ^{[1
]}

机构：

[1] Tech Univ Munich, Inst Biophys, Dept Phys, D-85748 Garching, Germany

来源：

MATERIALS LETTERS | 2000年 / 46卷 / 06期

关键词：

GaAs; impedance spectroscopy; SAMs; cyclic voltammetry;

D O I：

10.1016/S0167-577X(00)00195-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work is motivated by attempts in our laboratory to develop the physical basis for the design of biosensors (suited for aqueous medium) based on biofunctional supported membranes. We studied the electrical properties of n-doped gallium arsenide (GaAs) in contact with electrolyte and the high insulating properties of self-assembled monolayers (SAMs) of octadecanethiol (C18H37SH) by impedance spectroscopy and cyclic voltammetry. The average thickness of the thiol monolayer was measured by ellipsometry and confirmed by impedance. The analysis of the impedance in terms of equivalent circuits of the GaAs/electrolyte and GaAs/insurator/electrolyte interface is discussed. This analysis allowed measurements of the defect area fraction of the thiol monolayer. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：320 / 326

页数：7