In situ Raman monitoring of ultrathin Ge films

被引：24

作者：

Kanakaraju, S ^{[1
]}

Sood, AK

Mohan, S

机构：

[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[3] Cent Sci Instruments Org, Chandigarh, India

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the in situ interference enhanced Raman spectroscopy of ultrathin crystalline Ge films grown at 300 degrees C. The Raman spectra of the films show a peak at similar to 290 cm(-1) attributed to the confined optical phonon and a broadband on the low-frequency side at similar to 254 cm(-1) for 5 and 10 Angstrom thick films. The latter is attributed to disordered surface with large number of dangling bonds. For thicker films, the low-frequency mode appears at 270 cm(-1) assigned to surface optical phonons. (C) 1998 American Institute of Physics. [S0021-8979(98)07522-7]

引用

页码：5756 / 5760

页数：5

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