Grain boundary barrier breakdown in niobium donor doped strontium titanate using in situ electron holography

被引:39
作者
Johnson, KD [1 ]
Dravid, VP [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.123184
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electrical activity of numerous electroceramics originates with space charge potential across internal interfaces. Space charge formation and the resultant potential barrier at interfaces are believed to be responsible for many interesting and useful properties of electroceramics, ranging from nonlinear current-voltage characteristics to enhanced dielectric properties. Direct current electrical measurements of individual grain boundaries in Nb donor doped SrTiO3 bicrystals reveal a highly resistive and nonlinear behavior compared to single crystals. The origin of this nonlinear resistance has been examined with electron holography, observing both static and dynamic attributes of the internal potential. In the static case with no applied current, the grain boundary potential barrier height was measured to be about 0.45 V. During the application of a high current, this potential barrier was suppressed, presenting the first direct real space evidence for breakdown of an internal grain boundary barrier. (C) 1999 American Institute of Physics. [S0003-6951(99)04704-X].
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页码:621 / 623
页数:3
相关论文
共 9 条
[1]   NON-STOICHIOMETRY IN SRTIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1762-1769
[2]   INTERFACIAL SEGREGATION IN PEROVSKITES .1. THEORY [J].
DESU, SB ;
PAYNE, DA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3391-3397
[3]   ELECTRON HOLOGRAPHIC OBSERVATIONS OF THE ELECTROSTATIC-FIELD ASSOCIATED WITH THIN REVERSE-BIASED P-N-JUNCTIONS [J].
FRABBONI, S ;
MATTEUCCI, G ;
POZZI, G ;
VANZI, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2196-2199
[4]   ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE COMPOUND SEMICONDUCTORS [J].
GREUTER, F ;
BLATTER, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) :111-137
[5]   DIRECT IMAGING OF SPATIALLY VARYING POTENTIAL AND CHARGE ACROSS INTERNAL INTERFACES IN SOLIDS [J].
RAVIKUMAR, V ;
RODRIGUES, RP ;
DRAVID, VP .
PHYSICAL REVIEW LETTERS, 1995, 75 (22) :4063-4066
[6]  
Ravikumar V, 1997, J AM CERAM SOC, V80, P1117, DOI 10.1111/j.1151-2916.1997.tb02954.x
[7]  
RAVIKUMAR V, 1996, THESIS NW U
[8]   GRAIN BOUNDARY BARRIERS IN GERMANIUM [J].
TAYLOR, WE ;
ODELL, NH ;
FAN, HY .
PHYSICAL REVIEW, 1952, 88 (04) :867-875
[9]   GRAIN-BOUNDARY DEFECT CHEMISTRY OF ACCEPTOR-DOPED TITANATES - SPACE-CHARGE LAYER WIDTH [J].
VOLLMAN, M ;
WASER, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (01) :235-243