Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

被引：10

作者：

Gao, F ^{[1
]}

Huang, DD ^{[1
]}

Li, JP ^{[1
]}

Lin, YX ^{[1
]}

Kong, MY ^{[1
]}

Sun, DZ ^{[1
]}

Li, JM ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 04期

关键词：

Si growth rate; P doping; PH3 flow rate; P segregation; GSMBE;

D O I：

10.1016/S0022-0248(00)00856-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：461 / 465

页数：5

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