Phosphorus doping of Si and Si1-xGex grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4

被引：19

作者：

Chen, LP ^{[1
]}

Huang, GW ^{[1
]}

Chang, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

100 ppm PH3 diluted in hydrogen is used as the n-type dopant gas in Si and Si1-xGex epilayers grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 and GeH4. The phosphorus concentration in Si increases linearly at a small PH3 flow rate and becomes nearly saturated at higher flow rates, while the phosphorus concentration in Si1-xGex only shows a nearly linear behavior with PH3 flow rate. The growth rates of Si and Si1-xGex epilayers decrease seriously (similar to 50%) and slightly (similar to 10%) with the increase of PH3 how rate, respectively. These results con be explained by a model based on the enhancement of hydrogen desorption rate at smaller PH3 flow rates and different levels of the effects of phosphorus blocking of surface-activated sites between Si and Si1-xGex epilayers at higher PH3 flow rates. (C) 1996 American Institute of Physics.

引用

页码：1498 / 1500

页数：3

共 16 条

[1] SELECTIVE EPITAXIAL-GROWTH OF SI AND SI1-XGEX FILMS BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION USING SI2H6 AND GEH4 [J].