EPITAXIAL-BASE TRANSISTORS WITH ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION (UHV/CVD) EPITAXY - ENHANCED PROFILE CONTROL FOR GREATER FLEXIBILITY IN DEVICE DESIGN

被引：33

作者：

HARAME, DL

STORK, JMC

MEYERSON, BS

NGUYEN, TN

SCILLA, GJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 04期

关键词：

D O I：

10.1109/55.31702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：156 / 158

页数：3

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