BIPOLAR-TRANSISTOR WITH SELF-ALIGNED LATERAL PROFILE

被引：13

作者：

LI, GP

CHEN, TC

CHUANG, CT

STORK, JMC

TANG, DD

KETCHEN, MB

WANG, LK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 08期

关键词：

D O I：

10.1109/EDL.1987.26652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：338 / 340

页数：3

共 10 条

[1]

Cuthbertson A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P749

[2]

KONAKA S, 1984, 16TH P C SOL STAT DE, P209

[3]

Miyamoto J., 1983, International Electron Devices Meeting 1983. Technical Digest, P63

[4] AN ADVANCED PSA TECHNOLOGY FOR HIGH-SPEED BIPOLAR LSI [J].

NAKASHIBA, H ;

ISHIDA, I ;

AOMURA, K ;

NAKAMURA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1390-1394

[5] SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI [J].

NING, TH ;

ISAAC, RD ;

SOLOMON, PM ;

TANG, DDL ;

YU, HN ;

FETH, GC ;

WIEDMANN, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1010-1013

[6] ELEVATED ELECTRODE INTEGRATED-CIRCUITS [J].

SAKAI, T ;

YAMAMOTO, Y ;

KOBAYASHI, Y ;

YAMAUTI, H ;

ISHITANI, T ;

SUDO, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :379-385

[7]

Tang D. D., 1979, IEDM, P201

[8] SUB-NANOSECOND SELF-ALIGNED I2L-MTL CIRCUITS [J].

TANG, DD ;

NING, TH ;

ISAAC, RD ;

FETH, GC ;

WIEDMANN, SK ;

YU, HN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1379-1384

[9] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J].

TSANG, PJ ;

OGURA, S ;

WALKER, WW ;

SHEPARD, JF ;

CRITCHLOW, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :590-596

[10]

Walczyk F., 1983, International Electron Devices Meeting 1983. Technical Digest, P59

← 1 →