SELECTIVE EPITAXIAL-GROWTH OF SI AND SI1-XGEX FILMS BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION USING SI2H6 AND GEH4

被引：29

作者：

AKETAGAWA, K ^{[1
]}

TATSUMI, T ^{[1
]}

HIROI, M ^{[1
]}

NIINO, T ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 5A期

关键词：

UHV-CVD; SI2H6; GEH4; SELECTIVE EPITAXIAL GROWTH; SI; SI1-XGEX; GE FRACTION; FAST GAS FLOW SWITCHING;

D O I：

10.1143/JJAP.31.1432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aiming at the precise profile control of Si1-xGex, selective epitaxial growth (SEG) conditions and Si1-xGex growth were investigated by ultrahigh-vacuum chemical vapor deposition (UHV-CVD) using Si2H6 and GeH4. As long as the total amount of Si2H6 did not exceed the critical amount, Si- and Si1-xGex-SEG were both achieved independent of source gas flow rate and substrate temperature. The Ge fraction x of Si1-xGex could be decided by the flow rate ratio between Si2H6 and GeH4, independent of substrate temperature. Fast gas flow switching realized the formation of a Si(120 angstrom)/Si1-xGex(69 angstrom) strained layer superlattice at 587-degrees-C.

引用

页码：1432 / 1435

页数：4

共 9 条

[1] LIMITATIONS OF SELECTIVE EPITAXIAL-GROWTH CONDITIONS IN GAS-SOURCE MBE USING SI2H6 [J].

AKETAGAWA, K ;

TATSUMI, T ;

SAKAI, J .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :860-863

[2] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING DISILANE [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1484-1486

[3] SELECTIVE HETEROEPITAXIAL GROWTH OF SI1-XGEX USING GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

HIROI, M ;

KOYAMA, K ;

TATSUMI, T .

APPLIED PHYSICS LETTERS, 1990, 56 (12) :1107-1109

[4] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[5] KINETICS OF SILICON EPITAXY USING SIH4 IN A RAPID THERMAL CHEMICAL VAPOR-DEPOSITION REACTOR [J].

LIEHR, M ;

GREENLIEF, CM ;

KASI, SR ;

OFFENBERG, M .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :629-631

[6] COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXY [J].

MEYERSON, BS ;

URAM, KJ ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2555-2557

[7] LOW-TEMPERATURE SELECTIVE EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION FROM SIH4 AND GEH4/H2 [J].

RACANELLI, M ;

GREVE, DW .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2096-2098

[8] SELECTIVE SILICON EPITAXY USING REDUCED PRESSURE TECHNIQUE [J].

TANNO, K ;

ENDO, N ;

KITAJIMA, H ;

KUROGI, Y ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L564-L566

[9] SELECTIVE SILICON EPITAXIAL-GROWTH AT 800-DEGREES-C BY ULTRALOW-PRESSURE CHEMICAL VAPOR-DEPOSITION USING SIH4 AND SIH4/H2 [J].

YEW, TR ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2500-2507

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