SELECTIVE HETEROEPITAXIAL GROWTH OF SI1-XGEX USING GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：42

作者：

HIRAYAMA, H

HIROI, M

KOYAMA, K

TATSUMI, T

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Miyamae-Ku, Kawasaki 213

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si1-xGex heteroepitaxial layers have been grown on Si(100) surfaces by gas source molecular beam epitaxy. Si2H 6 and GeH4 were used as the Si and Ge source gases, respectively. The Ge mole fraction x in the grown film was found to be controlled by the GeH4 flow rate. The growth rate decreased gradually with increasing GeH4 flow rate. Selective epitaxial growth of Si1-xGex using a SiO2 mark on a Si(100) substrate was successfully achieved.

引用

页码：1107 / 1109

页数：3

共 13 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[2] DISILANE GAS SOURCE SI-MBE
HIRAYAMA, H
TATSUMI, T
AIZAKI, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 476 - 479
[3] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING DISILANE
HIRAYAMA, H
TATSUMI, T
AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1484 - 1486
[4] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE
HIRAYAMA, H
TATSUMI, T
OGURA, A
AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2213 - 2215
[5] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
HIRAYAMA, H
TATSUMI, T
AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2242 - 2243
[6] HIGH DOPING OF PHOSPHORUS IN SI USING GAS SOURCE MOLECULAR-BEAM EPITAXY
HIRAYAMA, H
TATSUMI, T
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (02) : 131 - 133
[7] INTERACTION OF SI2H6 WITH A SI(111)-7X7 SURFACE
IMBIHL, R
DEMUTH, JE
GATES, SM
SCOTT, BA
[J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5222 - 5233
[8] LANG DV, 1984, APPL PHYS LETT, V45, P1231
[9] COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXY
MEYERSON, BS
URAM, KJ
LEGOUES, FK
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2555 - 2557
[10] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY
PATTON, GL
IYER, SS
DELAGE, SL
TIWARI, S
STORK, JMC
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 165 - 167

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