LOW-TEMPERATURE SELECTIVE EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION FROM SIH4 AND GEH4/H2

被引：41

作者：

RACANELLI, M

GREVE, DW

机构：

[1] Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective epitaxy of GexSi1-x in an ultrahigh-vacuum chemical vapor deposition reactor from SiH4 and GeH4/H-2 is reported for the first time. Growth is performed at 600-degrees-C on patterned wafers after an 800-degrees-C bake which provides a clean silicon surface. Selective growth is maintained during a short incubation time. GeH4/H-2 is found to increase the incubation time and the growth rate improving selectivity. Diodes fabricated from selectively grown films demonstrate high material and film/oxide interface quality.

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页码：2096 / 2098

页数：3

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