TEMPERATURE-DEPENDENCE OF GROWTH OF GEXSI1-X BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION

被引：59

作者：

RACANELLI, M

GREVE, DW

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.102876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the deposition of epitaxial films of GexSi 1-x on (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665°C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2 flow.

引用

页码：2524 / 2526

页数：3

共 14 条

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