GROWTH OF GESI/SI STRAINED-LAYER SUPERLATTICES USING LIMITED REACTION PROCESSING

被引：57

作者：

GRONET, CM

KING, CA

OPYD, W

GIBBONS, JF

WILSON, SD

HULL, R

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[2] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2407 / 2409

页数：3

共 14 条

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[6] THIN, HIGHLY DOPED LAYERS OF EPITAXIAL SILICON DEPOSITED BY LIMITED REACTION PROCESSING [J].

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STURM, JC ;

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[7]

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[8]

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[9] STRUCTURE IMAGING OF COMMENSURATE GEXSI1-X/SI(100) INTERFACES AND SUPERLATTICES [J].

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[10]

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