EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4

被引：4

作者：

CHEN, LP ^{[1
]}

CHOU, TC ^{[1
]}

TSAI, WC ^{[1
]}

HUANG, GW ^{[1
]}

TSENG, HC ^{[1
]}

LIN, HC ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30039,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7B期

关键词：

SI-1-GE-X(X); LOW-TEMPERATURE EPITAXY; HYDROGEN DESORPTION; DISILANE; GERMANE;

D O I：

10.1143/JJAP.34.L869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Disilane and germane were used to grow Si1-xGex epilayers at 550 degrees C by ultrahigh-vacuum chemical vapor deposition (UHVCVD). The solid composition x and growth rate of Si1-xGex were evaluated from double-crystal X-ray rocking curves and show very strong dependence on the total source gas flow rate ([GeH4]+[Si2H6]) and the gas ratio ([GeH4]/[GeH4]+[Si2H6]). The solid composition increases with increase of the gas ratio and also with increasing the total source flux by keeping gas ratio constant. The growth rate increases with the solid composition at lower values and then becomes saturated in the higher composition range (x>0.22). The results can be explained by the relationships of the source fluxes, relative incorporation efficiency at activated surface sites and hydrogen desorption under different growth conditions.

引用

页码：L869 / L871

页数：3

共 12 条

[1] SELECTIVE EPITAXIAL-GROWTH OF SI AND SI1-XGEX FILMS BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION USING SI2H6 AND GEH4 [J].