FACTORS DETERMINING THE COMPOSITION OF STRAINED GESI LAYERS GROWN WITH DISILANE AND GERMANE

被引：14

作者：

TWEET, DJ ^{[1
]}

TATSUMI, T ^{[1
]}

HIRAYAMA, H ^{[1
]}

MIYANAGA, K ^{[1
]}

TERASHIMA, K ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 20期

关键词：

D O I：

10.1063/1.112644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth rates and compositions are reported for GeSi alloy films and superlattices epitaxially grown on both Ge(100) and Si(100) substrates using disilane and germane source gases in an ultrahigh vacuum chemical vapor deposition chamber. Although the growth rate changes rapidly with temperature the composition is nearly independent of it. Specifically, we find that the order of the adsorption reaction for disilane and germane is the same, resulting in the composition being determined by the partial pressures and by the ratio of the adsorption reaction rate constants. This ratio depends very weakly on temperature, if at all, and appears to vary slightly with the layer composition. © 1994 American Institute of Physics.

引用

页码：2579 / 2581

页数：3

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