A SUPER SELF-ALIGNED SELECTIVELY GROWN SIGE BASE (SSSB) BIPOLAR-TRANSISTOR FABRICATED BY COLD-WALL TYPE UHV CVD TECHNOLOGY

被引：26

作者：

SATO, F ^{[1
]}

TATSUMI, T ^{[1
]}

HASHIMOTO, T ^{[1
]}

TASHIRO, T ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 08期

关键词：

D O I：

10.1109/16.297732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel selective epitaxial growth (SEG) technology for fabricating the intrinsic SiGe-base layer of a double poly-Si self-aligned bipolar transistor has been developed. Selectively grown Si and SiGe-alloy layers were obtained by using Si2H6 + GeH4 + Cl2 + B2H6 gas system using cold-wall ultra-high vacuum (UHV)/CVD. We have optimized the growth conditions so that Si or SiGe grows selectively against Si3N4 both on single crystalline Si and on poly-Si of a structure consisting of a poly-Si layer overhanging the single crystalline Si substrate. The selective growth is maintained until the growth from the bottom Si and the top poly-Si coalesce. This selective growth permits a novel emitter-base self-aligned transistor which we call a super self-aligned selectively grown SiGe base (SSSB) HBT.

引用

页码：1373 / 1378

页数：6

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