BIPOLAR-TRANSISTOR FABRICATION USING SELECTIVE EPITAXIAL-GROWTH OF P-DOPED AND B-DOPED LAYERS IN GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引：4

作者：

HIRAYAMA, H

KOYAMA, K

TATSUMI, T

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Miyazaki 4-1-1, Miyamae-ku

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期

关键词：

D O I：

10.1109/55.46917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si n-p-n bipolar transistors were fabricated using selective epitaxial growth in disilane gas-source Si molecular beam epitaxy (Si-MBE). Selective growth of B-doped and P-doped Si was used for the base-and emitter-layer formation, respectively. The growth temperature was 600°C. No ion-implantation process was used. The base ohmic contact was formed using Al selective chemical vapor deposition (CVD). The fabricated transistor showed normal emitter-base and base-collector I-V characteristics. The common-emitter characteristics revealed a maximum current gain of 30. © 1990 IEEE

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页码：18 / 20

页数：3

相关论文

共 10 条

[1] HYDROGEN PASSIVATION EFFECT IN SI MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T .

APPLIED PHYSICS LETTERS, 1989, 54 (16) :1561-1563

[2] DISILANE GAS SOURCE SI-MBE [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :476-479

[3] SI (111) SURFACE CLEANING USING ATOMIC-HYDROGEN AND SIH2 STUDIED USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HIRAYAMA, H ;

TATSUMI, T .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :629-633

[4] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING DISILANE [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (18) :1484-1486

[5] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE [J].

HIRAYAMA, H ;

TATSUMI, T ;

OGURA, A ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2213-2215

[6] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[7] HIGH DOPING OF PHOSPHORUS IN SI USING GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T .

APPLIED PHYSICS LETTERS, 1989, 55 (02) :131-133

[8]

HIRAYAMA H, IN PRESS THIN SOLID

[9] SI/GE0.3SI0.7/SI HETEROJUNCTION BIPOLAR-TRANSISTOR MADE WITH SI MOLECULAR-BEAM EPITAXY [J].

TATSUMI, T ;

HIRAYAMA, H ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (11) :895-897

[10] ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY IN MOLECULAR-BEAM EPITAXIAL SILICON FILMS [J].

TATSUMI, T ;

AIZAKI, N ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L227-L229