SELECTIVE EPITAXY BASE TRANSISTOR (SEBT)

被引：8

作者：

BURGHARTZ, JN

GINSBERG, BJ

MADER, SR

CHEN, TC

HARAME, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

D O I：

10.1109/55.709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：259 / 261

页数：3

共 8 条

[1]

GINSBERG B, 1987, FAL M EL SOC HON, P991

[2] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J].

Ishitani, Akihiko ;

Kitajima, Hiroshi ;

Tanno, Kohetsu ;

Tsuya, Hideki .

Microelectronic Engineering, 1986, 4 (01) :3-33

[3] AN ADVANCED HIGH-PERFORMANCE TRENCH-ISOLATED SELF-ALIGNED BIPOLAR TECHNOLOGY [J].

LI, GP ;

NING, TH ;

CHUANG, CT ;

KETCHEN, MB ;

TANG, DDL ;

MAUER, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2246-2254

[4]

LIAW HM, 1987, 10TH P INT C CVD, P317

[5]

MICHEL AE, IN PRESS APPL PHYS L

[6] APPLICATION OF SELECTIVE SILICON EPITAXIAL-GROWTH FOR CMOS TECHNOLOGY [J].

NAGAO, S ;

HIGASHITANI, K ;

AKASAKA, Y ;

NAKATA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1738-1744

[7]

STORK H, 1987, IEDM

[8]

SUGII T, 1987, 1987 P S VLSI TECHN, P35

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