APPLICATION OF SELECTIVE SILICON EPITAXIAL-GROWTH FOR CMOS TECHNOLOGY

被引：25

作者：

NAGAO, S

HIGASHITANI, K

AKASAKA, Y

NAKATA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1738 / 1744

页数：7

共 12 条

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[3]

CHIU KY, 1982, IEEE T ELECTRON DEV, V29, P536, DOI 10.1109/T-ED.1982.20739

[4]

CLASSEN WAP, 1980, J ELECTROCHEM SOC, V127, P194

[5]

ENDO N, 1983, DEC IEDM, P31

[6]

HINE S, 1981, OCT P FALL M JAP SOC, P747

[7] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

JASTRZEBSKI, L ;

CORBOY, JF ;

MCGINN, JT ;

PAGLIARO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1571-1580

[8]

KANG D, 1980, J ELECTROCHEM SOC, V127, P2468

[9]

KUROSAWA K, 1981, DEC IEDM, P384

[10] SELECTIVE POLYSILICON OXIDATION TECHNOLOGY FOR VLSI ISOLATION [J].

MATSUKAWA, N ;

NOZAWA, H ;

MATSUNAGA, J ;

KOHYAMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :561-567

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