INFLUENCE OF SUBSTRATE ORIENTATION ON THE CHARACTERISTICS OF SI1-XGEX/SI STRAINED LAYERS GROWN BY MBE

被引：2

作者：

ETOH, H

MURAKAMI, E

ISHIZAKA, A

SHIMADA, T

MIYAO, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90524-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of substrate orientation, (100), (110) and (111), on the strain in Si1-xGex/Si growth has been studied by TEM, Raman spectroscopy and the double crystal X-ray method. The strains in the films perpendicular to the surface depend on substrate orientation, while the strains parallel to the surface correspond with the lattice mismatch between the substrate and the bulk alloy. The Si1-xGex films grown on (100)Si, (110)Si and (111)Si substrates are distorted from the cubic structure to tetragonal, orthorhombic and rhombohedral structures, respectively. © 1990.

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页码：263 / 268

页数：6

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