THE INFLUENCE OF CL2 ON SI1-XGEX SELECTIVE EPITAXIAL-GROWTH AND B-DOPING PROPERTIES BY UHV-CVD

被引：8

作者：

AKETAGAWA, K ^{[1
]}

TATSUMI, T ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90666-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the influence of a small quantity of Cl2, which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si2H6, on both the epitaxial growth rate and the B-doping properties for each Si and Si1-xGex film. The small quantity of Cl2 inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si1-xGex-SEG using Cl2, that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced.

引用

页码：484 / 488

页数：5

共 9 条

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