DOPING REACTION OF PH3 AND B2H6 WITH SI(100)

被引：139

作者：

YU, ML ^{[1
]}

VITKAVAGE, DJ ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.336708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4032 / 4037

页数：6

共 14 条

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[J]. SURFACE SCIENCE, 1976, 54 (01) : 1 - 5
[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
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[5] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
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RAIDER, SI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 305 - 308
[6] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
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[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[7] PROBING VALENCE STATES WITH PHOTOEMISSION AND INVERSE PHOTOEMISSION
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FAUSTER, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 815 - 821
[8] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
HIMPSEL, FJ
HOLLINGER, G
POLLAK, RA
[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
[9] P-DOPED POLYSILICON FILM GROWTH TECHNOLOGY
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2620 - 2624
[10] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM
MEYERSON, BS
YU, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2366 - 2368

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