PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM

被引：101

作者：

MEYERSON, BS

YU, ML

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115259

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2366 / 2368

页数：3

相关论文

共 14 条

[1] INTERPRETATION OF TEMPERATURE-DEPENDENCE OF PARTITION AND STICKING COEFFICIENTS FOR ANTIMONY, PHOSPHORUS AND BORON IN SILICON
BENNETT, RJ
PARISH, C
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (18) : 2555 - 2564
[2] MONOSILYLPHOSPHINE FORMATION BY RAPID SILYLENE INSERTION IN THE IR PHOTOCHEMISTRY OF SIH4-PH3 MIXTURES
BLAZEJOWSKI, J
LAMPE, FW
[J]. JOURNAL OF PHOTOCHEMISTRY, 1982, 20 (01): : 9 - 16
[3] COTTON FA, 1976, BASIC INORGANIC CHEM, P228
[4] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE
EVERSTEY.FC
PUT, BH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110
[5] HITCHMAN ML, 1979, ELECTROCHEMICAL SOC, P59
[6] P-DOPED POLYSILICON FILM GROWTH TECHNOLOGY
KUROKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2620 - 2624
[7] PHOSPHORUS ISOCONCENTRATION DIFFUSION STUDIES IN SILICON
MAKRIS, JS
MASTERS, BJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) : 1252 - 1255
[8] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION
MEYERSON, BS
OLBRICHT, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2361 - 2365
[9] ON THE REACTION-MECHANISM OF GAAS MOCVD
NISHIZAWA, J
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 413 - 417
[10] SUKHOV MS, 1982, IAN SSSR NEORG MATER, V18, P1077