INTERPRETATION OF TEMPERATURE-DEPENDENCE OF PARTITION AND STICKING COEFFICIENTS FOR ANTIMONY, PHOSPHORUS AND BORON IN SILICON

被引：7

作者：

BENNETT, RJ ^{[1
]}

PARISH, C ^{[1
]}

机构：

[1] UNIV KENT,ELECTR LABS,CANTERBURY,KENT,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 18期

关键词：

D O I：

10.1088/0022-3727/9/18/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2555 / 2564

页数：10

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