CONTROL OF IMPURITY DENSITY IN HOMOEPITAXIAL SEMICONDUCTOR LAYERS GROWN BY SUBLIMATION AT UHV

被引：9

作者：

BENNETT, RJ ^{[1
]}

PARISH, C ^{[1
]}

机构：

[1] UNIV KENT,ELECTR DEPT,CANTERBURY,KENT,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90188-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：497 / 501

页数：5

共 10 条

[1] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].

ATALLA, MM ;

TANNENBAUM, E .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J].

BATDORF, RL ;

SMITS, FM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) :259-264

[3] DIFFUSION ACROSS A SEMICONDUCTOR-VAPOUR INTERFACE [J].

BULLOUGH, R ;

NEWMAN, RC ;

WAKEFIELD, J .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465) :369-379

[4]

Burger R M, 1967, FUNDAMENTALS SILICON, V1

[5] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH [J].

GROVE, AS ;

RODER, A ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :802-&

[6]

HONIG RE, 1969, RCA REV, V30, P285

[7]

SMITES FM, 1965, PHYS REV, V104, P1242

[8]

TANNENBAUM E, 1964, J ELECTROCHEM SOC, V111, P201

[9] LOW-TEMPERATURE EPITAXIAL GROWTH OF DOPED SILICON FILMS AND JUNCTIONS [J].

THOMAS, RN ;

FRANCOMBE, MH .

SOLID-STATE ELECTRONICS, 1969, 12 (10) :799-+

[10] EPITAXIAL GROWTH OF SI ON SI IN ULTRA HIGH VACUUM ( EPITAXIAL TEMPERATURE LESS THAN 550 DEGREES C E ) [J].

WIDMER, H .

APPLIED PHYSICS LETTERS, 1964, 5 (05) :108-&

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