LIMITING CONDITIONS OF SI SELECTIVE EPITAXIAL-GROWTH IN SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：25

作者：

AKETAGAWA, K ^{[1
]}

TATSUMI, T ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The limiting conditions are presented of selective epitaxial growth (SEG) on a SiO2-patterned Si (001) substrate for Si gas-source molecular-beam epitaxy by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a Si surface in the wide temperature range of 500-850-degrees-C. On the other hand, polycrystalline Si nucleation on a SiO2 surface was intimately related to the total volume of supply gas. At a substrate temperature of 700-degrees-C and a Si2H6 flow rate of 60 sccm, a SEG layer could be deposited at a rate as high as 645 angstrom/min.

引用

页码：1735 / 1736

页数：2

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