Modeling growth in Si gas-source molecular beam epitaxy using Si2H6

被引：18

作者：

Hirose, F

机构：

[1] Advanced Technology Research Center, Mitsubishi Heavy Industries Ltd., Yokohama 236, 1-8-1 Sachiura, Kanazawa-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 179卷 / 1-2期

关键词：

Si; Si2H6; growth; gas-source MBE; adsorption; desorption;

D O I：

10.1016/S0022-0248(97)00092-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Substrate temperature dependencies of growth rate and surface hydrogen coverage for Si GSMBE using Si2H6 have been obtained experimentally. Validity of a growth model has been confirmed by comparing the model prediction with the experimental data. The Si growth can be described as a combination of the Si2H6 adsorption and the surface-hydrogen desorption. A Si2H6 molecule adsorbs on a Si(1 0 0) surface consuming two available dangling bonds, while the desorption of surface hydrogen is characterized as a first-order reaction.

引用

页码：108 / 114

页数：7

共 18 条

[1] STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH DISILANE USING RHEED INTENSITY OSCILLATIONS [J].

BUTZKE, S ;

WERNER, K ;

TROMMEL, J ;

RADELAAR, S ;

BALK, P .

THIN SOLID FILMS, 1993, 228 (1-2) :27-31

[2] THE ROLE OF HYDRIDE COVERAGE IN SURFACE-LIMITED THIN-FILM GROWTH OF EPITAXIAL SILICON AND GERMANIUM [J].

ERES, G ;

SHARP, JW .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) :7241-7250

[3] HYDROGEN COVERAGE DURING SI GROWTH FROM SIH4 AND SI2H6 [J].

GATES, SM ;

KULKARNI, SK .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :53-55

[4] DISSOCIATIVE CHEMISORPTION MECHANISMS OF DISILANE ON SI(100)-(2X1) AND H-TERMINATED SI(100) SURFACES [J].

GATES, SM ;

CHIANG, CM .

CHEMICAL PHYSICS LETTERS, 1991, 184 (5-6) :448-454

[5] DECOMPOSITION MECHANISMS OF SIH2, SIH3, AND SIH4 SPECIES ON SI(100)-(2X1) [J].

GATES, SM ;

GREENLIEF, CM ;

BEACH, DB .

JOURNAL OF CHEMICAL PHYSICS, 1990, 93 (10) :7493-7503

[6] HYDROGEN DESORPTION FROM SI - HOW DOES THIS RELATE TO FILM GROWTH [J].

GREENLIEF, CM ;

ARMSTRONG, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1810-1815

[7] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[8]

HIRAYAMA H, 1988, APPL PHYS LETT, V52, P1485

[9] SURFACE HYDROGEN DESORPTION AS A RATE-LIMITING PROCESS IN SILANE GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

HIROSE, F ;

SUEMITSU, M ;

MIYAMOTO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10) :L1881-L1883

[10] HIGH-QUALITY SILICON EPITAXY AT 500-DEGREES-C USING SILANE GAS-SOURCE MOLECULAR-BEAM TECHNIQUE [J].

HIROSE, F ;

SUEMITSU, M ;

MIYAMOTO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L2003-L2006

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