HIGH-QUALITY SILICON EPITAXY AT 500-DEGREES-C USING SILANE GAS-SOURCE MOLECULAR-BEAM TECHNIQUE

被引：49

作者：

HIROSE, F

SUEMITSU, M

MIYAMOTO, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L2003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2003 / L2006

页数：4

共 16 条

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[8] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING DISILANE
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1484 - 1486
[9] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2213 - 2215
[10] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
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AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2242 - 2243

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