共 40 条
Near-field Raman imaging using optically trapped dielectric microsphere
被引:42
作者:

Kasim, Johnson
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Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
Chartered Semicond Mfg Ltd, Singapore 738406, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Yu Ting
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Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

You Yu Meng
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Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Liu Jin Ping
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Chartered Semicond Mfg Ltd, Singapore 738406, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

See, Alex
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Chartered Semicond Mfg Ltd, Singapore 738406, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Li Lain Jong
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Nanyang Technol Univ, Sch Mat Sci Engn, Singapore 637819, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Shen Ze Xiang
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Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
机构:
[1] Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
[3] Nanyang Technol Univ, Sch Mat Sci Engn, Singapore 637819, Singapore
关键词:
D O I:
10.1364/OE.16.007976
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
The stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. (C) 2008 Optical Society of America.
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页码:7976 / 7984
页数:9
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