Near-field Raman imaging using optically trapped dielectric microsphere

被引:42
作者
Kasim, Johnson [1 ,2 ]
Yu Ting [1 ]
You Yu Meng [1 ]
Liu Jin Ping [2 ]
See, Alex [2 ]
Li Lain Jong [3 ]
Shen Ze Xiang [1 ]
机构
[1] Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
[3] Nanyang Technol Univ, Sch Mat Sci Engn, Singapore 637819, Singapore
关键词
D O I
10.1364/OE.16.007976
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. (C) 2008 Optical Society of America.
引用
收藏
页码:7976 / 7984
页数:9
相关论文
共 40 条
[31]   OPTICAL STETHOSCOPY - IMAGE RECORDING WITH RESOLUTION LAMBDA/20 [J].
POHL, DW ;
DENK, W ;
LANZ, M .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :651-653
[32]   Tip-enhanced Raman microscopy: practicalities and limitations [J].
Richards, D ;
Milner, RG ;
Huang, F ;
Festy, F .
JOURNAL OF RAMAN SPECTROSCOPY, 2003, 34 (09) :663-667
[33]   Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode [J].
Saito, Y ;
Motohashi, M ;
Hayazawa, N ;
Iyoki, M ;
Kawata, S .
APPLIED PHYSICS LETTERS, 2006, 88 (14)
[34]   Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy [J].
Senez, V ;
Armigliato, A ;
De Wolf, I ;
Carnevale, G ;
Balboni, R ;
Frabboni, S ;
Benedetti, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) :5574-5583
[35]   Near-field scanning Raman microscopy using apertureless probes [J].
Sun, WX ;
Shen, ZX .
JOURNAL OF RAMAN SPECTROSCOPY, 2003, 34 (09) :668-676
[36]   RAMAN-SPECTROSCOPY USING A FIBER OPTIC PROBE WITH SUBWAVELENGTH APERTURE [J].
TSAI, DP ;
OTHONOS, A ;
MOSKOVITS, M ;
UTTAMCHANDANI, D .
APPLIED PHYSICS LETTERS, 1994, 64 (14) :1768-1770
[37]   Reducing the uncertainty in laser beam size measurement with a scanning edge method [J].
Veshapidze, G. ;
Trachy, M. L. ;
Shah, M. H. ;
DePaola, B. D. .
APPLIED OPTICS, 2006, 45 (32) :8197-8199
[38]   Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology [J].
Wu, SL ;
Lin, YM ;
Chang, SJ ;
Lu, SC ;
Chen, PS ;
Liu, CW .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (01) :46-48
[39]   Enhanced Raman scattering by self-assembled silica spherical microparticles [J].
Yi, K. J. ;
Wang, H. ;
Lu, Y. F. ;
Yang, Z. Y. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
[40]   SCANNING INTERFEROMETRIC APERTURELESS MICROSCOPY - OPTICAL IMAGING AT 10 ANGSTROM RESOLUTION [J].
ZENHAUSERN, F ;
MARTIN, Y ;
WICKRAMASINGHE, HK .
SCIENCE, 1995, 269 (5227) :1083-1085