Higher order ferroic switching induced by scanning force microscopy

被引:101
作者
Abplanalp, M [1 ]
Fousek, J
Günter, P
机构
[1] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Tech Univ Liberec, Dept Phys, CZ-46117 Liberec, Czech Republic
[3] Tech Univ Liberec, Int Ctr Piezoelect Res, CZ-46117 Liberec, Czech Republic
关键词
D O I
10.1103/PhysRevLett.86.5799
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present the observation of ferroelastoelectric switching in a ferroelectric material. It is achieved in barium titanate thin film by simultaneously applying electric field and compressive stress with the tip of a scanning force microscope. For low compressive stresses, the presented measurements reveal classical ferroelectric domain reversal, i.e., the spontaneous polarization is aligned parallel to the applied electric field. However, for high compressive stresses the direction of polarization after switching is antiparallel to the poling field, demonstrating ferroelastoelectric switching.
引用
收藏
页码:5799 / 5802
页数:4
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