Optimization of Carrier Multiplication for More Effcient Solar Cells: The Case of Sn Quantum Dots

被引：27

作者：

Allan, Guy ^{[1
]}

Delerue, Christophe ^{[1
]}

机构：

[1] IEMN, Dept ISEN, F-59046 Lille, France

来源：

ACS NANO | 2011年 / 5卷 / 09期

基金：

欧盟第七框架计划;

关键词：

quantum dot carrier multiplication; Sn; nanocrystal; semiconductor; photovoltaics; solar cell; MULTIEXCITON GENERATION; EFFICIENCY LIMITS; PBSE; NANOSTRUCTURES; RELAXATION;

D O I：

10.1021/nn202180u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, alpha-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for MOH efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task.

引用

收藏

页码：7318 / 7323

页数：6

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