In-plane magnetic anisotropy in CoCrPt and CoCrTa films deposited onto patterned silicon substrates

Topographically induced in-plane magnetic anisotropy has been observed in CoCrTa and CoCrPt films deposited onto oxidized silicon substrates which are lithographically patterned with fine grooves of period 200-320 nm and amplitude 20-50 nm. The coercivity and remanence are higher parallel to the grooves. Anisotropy has been observed in both rf- and dc-magnetron sputtered films with a (11 (2) over bar 0) preferred orientation, which is achieved by growth at elevated temperature on a (200)-oriented Cr underlayer at low base pressures. Anisotropy increases with the amplitude of the grooves in the silica substrate. (C) 1999 American Institute of Physics. [S0021-8979(99)50008-X].