New III-V semiconductor lasers emitting near 2.6 mu m

Lasing has been obtained near 2.6 mu m in double-heterostructure InGaAs/InAlAs diode lasers grown by metalorganic vapor phase epitaxy on InAs substrates. At 80 K threshold currents are in the range of 40-200 mA for lasers of deep mesa geometry. The characteristic temperature of the temperature dependence of the threshold current T-0 is 21-23 K and lasing was achieved up to 150 K in a pulsed regime. A blueshift of up to 3.0 nm with increasing current is observed. A blueshift is also observed with increasing temperature, which is attributed to refractive index change due to the strong temperature dependence of the threshold carrier density in narrow gap III-V semiconductor lasers. (C) 1996 American Institute of Physics.