Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes

被引：5

作者：

Fukuyama, A

Nagatomo, H

Akashi, Y

Ikari, T

机构：

[1] Miyazaki Univ, Dept Mat Sci, Miyazaki 8892192, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

visible-light LEDs; Zn-doped InGaAlP; piezoelectric photoacoustic measurements; nonradiative recombination;

D O I：

10.1016/S1369-8001(00)00126-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zn atoms diffused from the Zn-doped p-InAlP cladding to the active layer in InGaAlP visible-light-emitting diodes may cause a degeneration of light output efficiency. A doping effect of the Zn atoms was investigated using a piezoelectric photoacoustic measurement from a nonradiative transition point of view. The results indicate that the Zn-doping induces a decrease of the nonradiative component of the electron transitions above the bandgap of the active layer. (C) 2001 Elsevier Science Ltd. Al rights reserved.

引用

页码：265 / 267

页数：3

共 7 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].