EFFECTS OF SUBSTRATE MISORIENTATION AND ZN DOPING CHARACTERISTICS ON THE PERFORMANCE OF ALGAINP VISIBLE LIGHT-EMITTING-DIODES

被引：4

作者：

LIN, JF ^{[1
]}

WU, MC ^{[1
]}

JOU, MJ ^{[1
]}

CHANG, CM ^{[1
]}

LEE, BJ ^{[1
]}

机构：

[1] IND TECHNOL RES INST,OPTOELECTR & SYST LABS,HSINCHU 31015,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 6B期

关键词：

MOVPE; ALGALNP; MISORIENTED SUBSTRATES; LIGHT-EMITTING DIODES; ELECTROLUMINESCENCE;

D O I：

10.1143/JJAP.33.L857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of substrate misorientation and Zn doping characteristics on the device performance of AlGaInP double-heterostructure light-emitting diodes are described. The light output power is found to be strongly dependent on the Zn concentration. The degradation of light output, which was caused by the increase in the number of Zn atoms, is investigated by photoluminescence and electroluminescence measurements. The emission properties can be improved by optimizing the growth of AlGaInP on an intentionally misoriented substrate and the Zn-doping level in the p-cladding layer. The external quantum efficiency of 3.5% at 618 nm can be obtained from the optimized LEDs with a 7.5-mum-thick GaP window layer.

引用

页码：L857 / L859

页数：3

共 7 条

[1] STUDY ON RADIATIVE EFFICIENCY IN ALGAINP/GAINP DOUBLE-HETEROSTRUCTURES - INFLUENCE OF DEEP LEVEL IN CLADDING LAYERS [J].

DOMEN, K ;

SUGIURA, K ;

ANAYAMA, C ;

KONDO, M ;

SUGAWARA, M ;

TANAHASHI, T ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :529-532

[2] THE GROWTH AND PROPERTIES OF HIGH-PERFORMANCE ALGALNP EMITTERS USING A LATTICE MISMATCHED GAP WINDOW LAYER [J].

FLETCHER, RM ;

KUO, CP ;

OSENTOWSKI, TD ;

HUANG, KH ;

CRAFORD, MG ;

ROBBINS, VM .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :1125-1130

[3] TWOFOLD EFFICIENCY IMPROVEMENT IN HIGH-PERFORMANCE ALGAINP LIGHT-EMITTING-DIODES IN THE 555-620 NM SPECTRAL REGION USING A THICK GAP WINDOW LAYER [J].

HUANG, KH ;

YU, JG ;

KUO, CP ;

FLETCHER, RM ;

OSENTOWSKI, TD ;

STINSON, LJ ;

CRAFORD, MG ;

LIAO, ASH .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1045-1047

[4] GROWTH AND CHARACTERIZATION OF GA0.65IN0.35P ORANGE LIGHT-EMITTING-DIODES BY METALORGANIC VAPOR-PHASE EPITAXY [J].

LIN, JF ;

WU, MC ;

JOU, MJ ;

CHANG, CM ;

CHEN, CY ;

LEE, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1781-1786

[5] A DEEP LEVEL IN ZN-DOPED INGAAIP [J].

NOZAKI, C ;

OHBA, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5394-5397

[6] HIGH-EFFICIENCY INGAALP/GAAS VISIBLE LIGHT-EMITTING-DIODES [J].

SUGAWARA, H ;

ISHIKAWA, M ;

HATAKOSHI, G .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1010-1012

[7] HIGH-BRIGHTNESS INGAALP GREEN LIGHT-EMITTING-DIODES [J].

SUGAWARA, H ;

ITAYA, K ;

NOZAKI, H ;

HATAKOSHI, G .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1775-1777

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