Fast etching and metallization of SiC ceramics with copper-vapor-laser radiation

The etching of polycrystalline SiC is studied with the help of radiation of a copper-vapor laser either in air or under the layer of a liquid (H2O, DMSO). The etching rate in air is as high as 0.24 mu m/pulse, in DMSO 0.07 mu m/pulse at an energy density of 16 J/cm(2). The etched surface is characterized with Scanning Electron Microscopy (SEM) and X-ray diffractometry. Etching of SiC ceramics in air revealed the partial amorphization of SiC and the formation of microcrystals of elementary Si with an average size of 300 Angstrom. The etched surface of SiC ceramics takes on the ability to reduce Cu from a corresponding electroless plating solution. The adherence of the deposit is as high as 30 N/mm(2) and is a function of the scanning velocity of the laser beam.