Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls

被引：14

作者：

Grover, R ^{[1
]}

Hryniewicz, JV ^{[1
]}

King, OS ^{[1
]}

Van, V ^{[1
]}

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 05期

关键词：

D O I：

10.1116/1.1391252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine methane-hydrogen-argon-based deep dry etching of InP for facet-quality sidewalk by reactive ion etching. A process is developed for etch depths as high as 5.8 mum. Masks studied include Ni, NiCr, Ti, SiO2, and Ti-SiO2. Sidewall roughness was estimated to be a few nn (based on high resolution scanning electron micrographs). This may be useful for fabrication of optical microelectromechanical systems, photonic wires, and photonic crystals in the InP material system. (C) 2001 American Vacuum Society.

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收藏

页码：1694 / 1698

页数：5

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